Fluidic self-assembly for MicroLED displays by controlled viscosity.

Displays in which arrays of microscopic 'particles', or chiplets, of inorganic light-emitting diodes (LEDs) constitute the pixels, termed MicroLED displays, have received considerable attention1,2 because they can potentially outperform commercially available displays based on organic LEDs3,4 in terms of power consumption, colour saturation, brightness and stability and without image burn-in issues1,2,5-7. To manufacture these displays, LED chiplets must be epitaxially grown on separate wafers for maximum device performance and then transferred onto the display substrate. Given that the number of LEDs needed for transfer is tremendous-for example, more than 24 million chiplets smaller than 100 µm are required for a 50-inch, ultra-high-definition display-a technique capable of assembling tens of millions of individual LEDs at low cost and high throughput is needed to commercialize MicroLED displays. Here we demonstrate a MicroLED lighting panel consisting of more than 19,000 disk-shaped GaN chiplets, 45 µm in diameter and 5 µm in thickness, assembled in 60 s by a simple agitation-based, surface-tension-driven fluidic self-assembly (FSA) technique with a yield of 99.88%. The creation of this level of large-scale, high-yield FSA of sub-100-µm chiplets was considered a significant challenge because of the low inertia of the chiplets. Our key finding in overcoming this difficulty is that the addition of a small amount of poloxamer to the assembly solution increases its viscosity which, in turn, increases liquid-to-chiplet momentum transfer. Our results represent significant progress towards the ultimate goal of low-cost, high-throughput manufacture of full-colour MicroLED displays by FSA.

Concurrent self-assembly of RGB microLEDs for next-generation displays.

MicroLED displays have been in the spotlight as the next-generation displays owing to their various advantages, including long lifetime and high brightness compared with organic light-emitting diode (OLED) displays. As a result, microLED technology1,2 is being commercialized for large-screen displays such as digital signage and active R&D programmes are being carried out for other applications, such as augmented reality3, flexible displays4 and biological imaging5. However, substantial obstacles in transfer technology, namely, high throughput, high yield and production scalability up to Generation 10+ (2,940 × 3,370 mm2) glass sizes, need to be overcome so that microLEDs can enter mainstream product markets and compete with liquid-crystal displays and OLED displays. Here we present a new transfer method based on fluidic self-assembly (FSA) technology, named magnetic-force-assisted dielectrophoretic self-assembly technology (MDSAT), which combines magnetic and dielectrophoresis (DEP) forces to achieve a simultaneous red, green and blue (RGB) LED transfer yield of 99.99% within 15 min. By embedding nickel, a ferromagnetic material, in the microLEDs, their movements were controlled by using magnets, and by applying localized DEP force centred around the receptor holes, these microLEDs were effectively captured and assembled in the receptor site. Furthermore, concurrent assembly of RGB LEDs were demonstrated through shape matching between microLEDs and receptors. Finally, a light-emitting panel was fabricated, showing damage-free transfer characteristics and uniform RGB electroluminescence emission, demonstrating our MDSAT method to be an excellent transfer technology candidate for high-volume production of mainstream commercial products.

Effect of Light Absorption in InGaN/GaN Vertical Light-Emitting Diodes.

For evaluating the effect of light absorption in vertically structured thin film light-emitting diodes (VLEDs), we investigate the dependence of the efficiencies on the several specific parameters including thickness and doping concentration (N(D)) of the n-GaN layer, a design of hetero-structures of the n-GaN layer, and a number of pairs of multi-quantum wells (MQWs). Generally, there is a complementary relation between internal quantum efficiency (IQE) and light extraction efficiency (LEE). However, we confirmed that LEE determined by light absorption is more dominant than IQE in VLED structures with a textured surface, from numerical simulation and experimental results. Effect of light absorption is more prominent in the vertical chip with a textured surface than in that with a flat surface, because a travel length of light extracted from the textured surface is longer. Minimizing light absorption in VLEDs is a key technology for improving light output, and light absorption speaks for the index of enhancement by the general technologies for improving LEE.

Dependence of efficiencies in GaN-based vertical blue light-emitting diodes on the thickness and doping concentration of the n-GaN layer.

We investigate the dependence of various efficiencies in GaN-based vertical blue light-emitting diode (LED) structures on the thickness and doping concentration of the n-GaN layer by using numerical simulations. The electrical efficiency (EE) and the internal quantum efficiency (IQE) are found to increase as the thickness or doping concentration increases due to the improvement of current spreading. On the contrary, the light extraction efficiency (LEE) decreases with increasing doping concentration or n-GaN thickness by the free-carrier absorption. By combining the results of EE, IQE, and LEE, wall-plug efficiency (WPE) of the vertical LED is calculated, and the optimum thickness and doping concentration of the n-GaN layer is found for obtaining the maximum WPE.